Purchase MX29F200CT, In-stock MX29F200CT From SeekIC.
Part Number: MX29F200CT
Description: The MX29F200C T/B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXIC's Flash mem...
- Table of contents:
MX29F200CT
-
Suppliers
DataSheet
General Description
MX29F200CT General Description
The MX29F200C T/B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200C T/B is packaged in 44-pin SOP and 48- pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.
The standard MX29F200C T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F200C T/B has separate chip enable (CE#) and output enable (OE# ) controls.
MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F200C T/B uses a ommand register to manage this functionality. The command register allows for 100%TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F200C T/B uses a 5.0V ± 10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
MX29F200CT Maximum Ratings
| Drain Bias Voltage (Vdd1, 2, 3, 4, 5) | +8 Vdc |
| Gate Bias Voltage (Vgg) | -2.0 to 0 Vdc |
| RF Input Power (RFin)(Vdd = +7.0 Vdc) | +20 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 11.6 mW/above 85 ) |
10 W |
| Thermal Resistance (channel to ground paddle) |
6.5 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to change.
MX29F200CT Features
• 5.0V±10% for read, erase and write operation
• 131072x16/262144x8 switchable
• Fast access time: 55/70/90ns
• Compatible with MX29F200T/B device
• Low power consumption
- 40mA maximum active current@5MHz
- 1uA typical standby current
• Command register architecture
- Byte/Word Programming (9us/11us typical)
- Sector Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors or the whole chip with Erase Suspend capability.
- Automatically program and verify data at specified address
• Status Reply
- Data# Polling & Toggle bit for detection of program and erase cycle completion.
• Ready/Busy# pin(RY/BY#)
- Provides a hardware method or detecting program or erase cycle completion
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power supply Flash
- Superior inadvertent write protection
• Sector protection
- Hardware method to disable any combination of sectors from program or erase operations
- Temporary sector unprotect allows code changes in previously locked sectors
• Sector protect/chip unprotect for 5V only system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Erase suspend/ Erase Resume
- Suspends an erase operation to read data from, or program data to a sector that is not being erased, then resume the erase operation.
• Hardware reset pin
- Resets internal state mechine to the read mode
• 20 years data retention
• Package type:
- 44-pin SOP
- 48-pin TSOP
- All Pb-free devices are RoHS Compliant
MX29F200CT Connection Diagram
MX205Q
PDF/DataSheet Download
- Datasheet: MX205Q
- File Size: 252911 KB
- Manufacturer: ETC [ETC]
- Click here to Download
- ·MX205QC
- ETC [ETC]
- Low Cost, 5.0g, Dual Axis Accelerometer with Analog Outputs
- 252911 KB
- ·MX205QL
- ETC [ETC]
- Low Cost, 5.0g, Dual Axis Accelerometer with Analog Outputs
- 252911 KB
- ·MX210Q
- ETC [ETC]
- Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs
- 252922 KB
- ·MX210QC
- ETC [ETC]
- Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs
- 252922 KB
- ·MX210QL
- ETC [ETC]
- Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs
- 252922 KB
- ·MX214
- CMLMICRO [CML Microcircuits]
- Variable Split Band Inverter
- 238010 KB
- ·MX23C1010
- MCNIX [Macronix International]
- 1M-BIT MASK ROM (8 BIT OUTPUT)
- 119262 KB
- ·MX23C1010MC-10
- MCNIX [Macronix International]
- 1M-BIT MASK ROM (8 BIT OUTPUT)
- 119262 KB
MX29F200CT Relative Products
MX29F200CB
The MX29F200CB is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200C T/B is packaged in 44-pin SOP and 48...
MX29F200B
The MX29F200T/MX29F200B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200T/B is packaged in 44-pin SOP...
MX29F1611
The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8.The MX29F1611 includes 16-128KB(131,072 Bytes)blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write ...
MX29F1610B
The MX29F1610A/MX29F1610B is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A/B includes 16-128KB(131,072) blocks or16-64KW(65,536) blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write nonv...
MX29F1610A
The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. TheMX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile ran...
MX29F100TTA
The MX29F100TTA is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. It is designed to be reprogrammed and erased in-system or ...
Hotspot Suppliers Product
AO4800
Price: 0.28-0.38 USD
field effect transistor, SOP8, 30 V, advanced trench technology, dual N-channel enhancement mode
SKM100GB123D
Price: 43-45 USD
IGBT module, 1200 V, 100 A, 400 W, SKM100GB123D
TMS320LF2406APZA
Price: 7.2-8 USD
DSP controller, LQFP-100 pins, 25-ns Instruction Cycle Time, Low-Power 3.3-V Design
IRFR3412PBF
Price: 0.52-0.58 USD
SMPS MOSFET, N channel, 100V, 48A, DPAK, International Rectifier, IRFR3412PBF
ADUM1201ARZ-RL
Price: 1.1-1.25 USD
Dual-Channel Digital Isolator, SOP, Low power operation, 5V, High temperature operation
W9816G6IH-6
Price: 0.5-1.2 USD
512K × 2 BANKS × 16 BITS SDRAM, TSOP, Power Dissipation 1 W, Short Circuit Output Current 50 mA
UCC2580DTR-4
Price: 0.001-19 USD
SOIC, PWM controller, 25mA
NL6448BC26-11
Price: 0.1-1 USD
NL6448BC26-11, NEC , 8.4-inch, industrial LCD Panel , 640*480 pixel
AD8016ARB
Price: 5-10 USD
high output current, dual amplifier, 24-SOIC, 26.4 V, Low Power Operation, 50 Ω
TDA8374C
Price: 3-5 USD
I2C-bus controlled economy PAL/NTSC and NTSC TV-processors
C2216
Price: 0.005-1 USD
C2216, TO-92, Toshiba Semiconductor
AC82G41
Price: 6-10 USD
AC82G41, BGA, Intel Corporation
