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Part Number: MX29LA641DL

 

 

 

 

Description: MX29LA641D H/L is a 64Mbit flash memory that can be organized as 8Mbytes of 8 bits each or as 4Mbytes ...


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MX29LA641DL General Description


MX29LA641D H/L is a 64Mbit flash memory that can be organized as 8Mbytes of 8 bits each or as 4Mbytes of 16 bits
each. These devices operate over a voltage range of 2.7V to 3.6V typically using a 3V power supply input. The memory array is divided into 128 equal 64 Kilo byte blocks.

The MX29LA641D H/L is offered in a 64-ball BGA(LFBGA) JEDEC standard package. The package is offered in leaded, as well as lead-free version that is compliant to the RoHS specifications. The software algorithm used for this device also adheres to the JEDEC standard for single power supply devices. These flash parts can be programmed in system or on commercially available EPROM/Flash programmers.

Separate OE# and CEx (Output Enable and Chip Enable) signals are provided to simplify system design. When used
with high speed processors, the 90ns read access time of this flash memory permits operation with minimal time lost
due to system timing delays.

The automatic write algorithm provided on Macronix flash memories perform an automatic erase prior to write. The user only needs to provide a write command to the command register. The on-chip state machine automatically controls the 
program and erase functions including all necessary internal timings. Since erase and write operations take much longer time than read operations, erase/write can be interrupted to perform read operations in other sectors of the device. For this, Erase Suspend operation along with Erase Resume operation are provided. Data# polling or Toggle bits are used to indicate the end of the erase/write operation.

The device is manufactured at the Macronix fabrication facility using the time tested and proven MXIC advanced technology.

This proprietary non-epi process provides a very high degree of latch-up protection for stresses up to 100 milliamperes on address and data pins from -1V to 1.5xVCC.

With low power consumption and enhanced hardware and software features, this flash memory retains data reliably for at least ten years. Erase and programming functions have been tested to meet a typical specification of 100,000
cycles of operation.

MX29LA641DL Maximum Ratings

Surrounding Temperature with Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... . .-65to +125
Storage Temperature . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... -65 to +150
Voltage Range
Vcc . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . -0.5 V to +4.0 V
RESET#, A9, ACC and OE# . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . -0.5 V to +10.5 V
The other pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5 V to Vcc +0.5 V
Output Short Circuit Current (less than one second) . . . . . . . . . . . . . . . . . . . . . . . . .  . . .200 mA


Note:
1. Minimum voltage may undershoot to -2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to Vcc+2V during transition and for less than 20ns during transitions.

MX29LA641DL Features

• 8M Bytes/4M Words switchable
• 128 Equal Sectors with 64K Bytes (32K words) each
   - Any combination of sectors can be erased with erase suspend/resume function
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1.0V to 1.5 x Vcc
• Low Vcc write inhibit is equal to or less than VLKO
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash

MX29LA641DL datasheet

MX205Q
PDF/DataSheet Download

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