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Part Number: MX29LV640EBTI-70G

Category: Other

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Description: The MX29LV640EBTI-70G is designed as one kind of 8-mega bit flash memory device that offers access time as fast as 45ns, ...


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MX29LV640EBTI-70G General Description


The MX29LV640EBTI-70G is designed as one kind of 8-mega bit flash memory device that offers access time as fast as 45ns, allowing operation of high-speed microprocessors without wait states. And this device uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program / Erase algorithms.

Features of the MX29LV640EBTI-70G are:(1)extended single - supply voltage range 2.7V to 3.6V;(2)1,048,576 x 8/524,288 x 16 switchable;(3)Single power supply operation - 3.0V only operation for read, erase and program operation;(4)Fast access time: 45R/55R/70/90ns;(5)Auto Erase (chip & sector) and Auto Program;(6)Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash;(7)10 years data retention;(8)100,000 minimum erase/program cycles;(9)Latch-up protected to 100mA from -1V to VCC+1V.etc.

The absolute maximum ratings of the MX29LV640EBTI-70G can be summarized as:(1)Storage Temperature Plastic Packages: -65 to +150 ;(2)Ambient Temperature with Power Applied: -65 to +125 ;(3)Voltage with Respect to Ground Vcc: -0.5 V to +4.0 V;(4)Output Short Circuit Current: 200 mA.etc. If you want to know more information such as the electrical characteristics about the MX29LV640EBTI-70G, please download the datasheet in www.seekic.com or www.chinaicmart.com.

MX29LV640EBTI-70G Connection Diagram

MX29LV640EBTI-70G  Connection Diagram

MX29LV640EBTI-70G datasheet

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