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M I E - 8 14A2

Features: ` High radiant power and high radiant intesity` Suitable for DC and high pulse current operation`Peak wavelength P =940 nm` Good spectral matching to Si-PhotodetectorSpecifications Parameter Maximum Rating Unit Power Dissipation 150 mW Peak Forwa...

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M I E - 8 14A2: Features: ` High radiant power and high radiant intesity` Suitable for DC and high pulse current operation`Peak wavelength P =940 nm` Good spectral matching to Si-PhotodetectorSpecifications ...

M I E - 8 14A2 Data Sheet

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Part Number:
M I E - 8 14A2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` High radiant power and high radiant intesity
` Suitable for DC and high pulse current operation
`Peak wavelength P =940 nm
` Good spectral matching to Si-Photodetector


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
150
mW
Peak Forward Curren
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.


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