Purchase NDB6020, In-stock NDB6020 From SeekIC.
Part Number: NDB6020
Description: These logic level N-Channel enhancement mode power field effect transistors are produced using Nationa...
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NDB6020
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DataSheet
General Description
NDB6020 General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB6020 Maximum Ratings
| Symbol | Parameter |
NDP6020 |
NDB6020 |
Units |
| VDSS | Drain-Source Voltage |
20 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
20 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
±8 |
V | |
| ID | Drain Current - Continuous - Pulsed |
35 |
A | |
|
100 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
60 |
W | |
|
0.4 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
NDB6020 Features
`35 A, 20 V. RDS(ON) = 0.023 @ VGS= 4.5 V
RDS(ON) = 0.028 @ VGS= 2.7 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
RDS(ON) = 0.028 @ VGS= 2.7 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB6020
PDF/DataSheet Download
- Datasheet: NDB6020
- File Size: 385577 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
- ·NDB4050
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- ·NDB4050L
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- ·NDB4060
- FAIRCHILD [Fairchild Semiconductor]
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- ·NDB4060L
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
- 69961 KB
- ·NDB408A
- FAIRCHILD [Fairchild Semiconductor]
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- ·NDB408AE
- FAIRCHILD [Fairchild Semiconductor]
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- 74813 KB
- ·NDB408B
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Enhancement Mode Field Effect Transistor
- 74813 KB
- ·NDB408BE
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Enhancement Mode Field Effect Transistor
- 74813 KB
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