MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-263(D2PAK)
D/C: 09+
Description: These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchi...
These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter |
NDP6020P |
NDB6020P |
Units |
| VDSS | Drain-Source Voltage |
-20 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
±8 |
V | |
| ID | Drain Current - Continuous - Pulsed |
-24 |
A | |
|
-70 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
60 |
W | |
|
0.4 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
NDB6020P
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