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MFG:NS Package Cooled:TO220
Part Number: NDB603AL
MFG: NS
Package Cooled: TO220
Description: These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchi...
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NDB603AL
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DataSheet
General Description
NDB603AL General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB603AL Maximum Ratings
|
Symbol |
Parameter |
NDP603AL |
NDB603AL |
Units |
| VDSS | Drain-Source Voltage |
30 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
± 20 |
V | |
| ID | Drain Current - Continuous - Pulsed |
25 (Note 1) |
A | |
|
100 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
50 |
W | |
|
0.4 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
NDB603AL Features
`25A, 30V. RDS(ON) = 0.022 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.
NDB603AL
PDF/DataSheet Download
- Datasheet: NDB603AL
- File Size: 67281 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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