NDB6030

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : TO-263AB


Features:

·46 A, 30 V. R_DS(ON) = 0.018 @ V_GS=10 V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low R_DS(ON).
·TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications


Specifications

Symbol	Parameter	NDP6030	NDB6030	Units
VDSS	Drain-Source Voltage	30		V
VDGR	Drain-Gate Voltage (RGS < 1 M)	30		V
VGSS	Gate-Source Voltage - Continuous	±20		V
ID	Drain Current - Continuous - Pulsed	46		A
		135
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	75		W
		0.5		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These N-Channel enhancement mode power field effect transistors NDB6030 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. NDB6030 is particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.