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Part Number: NDB6030
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter |
NDP6030 |
NDB6030 |
Units |
| VDSS | Drain-Source Voltage |
30 |
V | |
| VDGR | Drain-Gate Voltage (RGS < 1 M) |
30 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
±20 |
V | |
| ID | Drain Current - Continuous - Pulsed |
46 |
A | |
|
135 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
NDB6030
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