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Part Number: NDB6030

 

 

 

 

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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NDB6030 General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6030 Maximum Ratings

Symbol Parameter
NDP6030
NDB6030
Units
VDSS Drain-Source Voltage
30
V
VDGR Drain-Gate Voltage (RGS < 1 M)
30
V
VGSS Gate-Source Voltage - Continuous
±20
V
ID Drain Current - Continuous
- Pulsed
46
A
135
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
75
W
0.5
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175

NDB6030 Features

·46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications

NDB6030 datasheet

NDB6030
PDF/DataSheet Download

  • Datasheet: NDB6030
  • File Size: 57525 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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