MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-263(D2PAK)
D/C: 09+
Description: These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchi...
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
NDP6030PL |
NDB6030PL |
Units |
| VDSS | Drain-Source Voltage |
-30 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
± 16 |
V | |
| ID | Drain Current - Continuous - Pulsed |
-30 |
A | |
|
-90 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
NDB6030PL
PDF/DataSheet Download
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These N-Channel enhancement mode power field effect transistors NDB6030are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide sup...
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