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Package Cooled:02+  D/C:220  

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Part Number: NDP4050

 

 

Package Cooled: 02+

D/C: 220

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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NDP4050 General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP4050 Maximum Ratings

Symbol
Parameter
NDP4050
NDB4050
Units
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MW)
50
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP 50 µs)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
± 15
A
± 45
PD
Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDP4050 Features

`15A, 50V. RDS(ON) = 0.10 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDP4050 datasheet

NDP4050
PDF/DataSheet Download

  • Datasheet: NDP4050
  • File Size: 68582 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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