Purchase NDP4050L, In-stock NDP4050L From SeekIC.
Package Cooled:02+ D/C:220


Part Number: NDP4050L
Package Cooled: 02+
D/C: 220
Description: These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchi...
Package Cooled:02+ D/C:220


Package Cooled: 02+
D/C: 220
Description: These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchi...
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol |
Parameter |
NDP4050L |
NDB4050L |
Units |
| VDSS | Drain-Source Voltage |
50 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
50 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 16 |
V | |
|
± 25 | ||||
| ID | Drain Current - Continuous - Pulsed |
15 |
A | |
|
45 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
NDP4050L
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