NDT410EL

MOSFET DISC BY MFG 2/02

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NDT410EL Picture
SeekIC No. : 00166735 Detail

NDT410EL: MOSFET DISC BY MFG 2/02

floor Price/Ceiling Price

Part Number:
NDT410EL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.25 Ohms
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 2.1 A


Features:

`2.1A 100V. RDS(ON) = 0.25 @ VGS = 5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.





Pinout






Specifications

Symbol Parameter NDT410EL Units
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage - Continuous 20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
2.1 A
10
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.





Description

The NDT410EL has the following features including (1)high density cell design for extremely low RDS(ON),(2)high power and current handling capability in a widely used surface mount package.

Power SOT N-channel logic level enhancement mode power field effect transistors NDT410EL are produced using fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDT410EL is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent.These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option of NDT410EL comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table.

These full reels of NDT410EL are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper.One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.Life support NDT410EL or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.This datasheet contains preliminary data, and supplementary data of NDT410EL will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.






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