NDT451AN_J23Z

MOSFET N-Channel FET Enhancement Mode

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SeekIC No. : 00161691 Detail

NDT451AN_J23Z: MOSFET N-Channel FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDT451AN_J23Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : +/- 7.2 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.035 Ohms
Continuous Drain Current : +/- 7.2 A


Parameters:

Technical/Catalog InformationNDT451AN_J23Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.2A
Rds On (Max) @ Id, Vgs35 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds 720pF @ 15V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT451AN_J23Z
NDT451AN_J23Z



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