NDT451AN

MOSFET N-Channel FET Enhancement Mode

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NDT451AN: MOSFET N-Channel FET Enhancement Mode

floor Price/Ceiling Price

US $ .32~.54 / Piece | Get Latest Price
Part Number:
NDT451AN
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.54
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  • Processing time
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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

`7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V
                    RDS(ON) = 0.05 @ VGS = 4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT451AN Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
± 7.2 A
± 25
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT N-Channel enhancement mode power field effect transistors NDT451AN are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT451AN is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDT451AN
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.2A
Rds On (Max) @ Id, Vgs35 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds 720pF @ 15V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSOT-223-4
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT451AN
NDT451AN
NDT451ANDKR ND
NDT451ANDKRND
NDT451ANDKR



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