NE3503M04-A

Transistors RF GaAs Low Noise HJ FET

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SeekIC No. : 00219089 Detail

NE3503M04-A: Transistors RF GaAs Low Noise HJ FET

floor Price/Ceiling Price

US $ .63~1 / Piece | Get Latest Price
Part Number:
NE3503M04-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1
  • $.89
  • $.78
  • $.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Technology Type : HEMT Frequency : 12 GHz
Gain : 12 dB Noise Figure : 0.45 dB
Forward Transconductance gFS (Max / Min) : 55 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 125 C Power Dissipation : 125 mW
Mounting Style : SMD/SMT Package / Case : FTSMM-4 (M04)    

Description

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Frequency : 12 GHz
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Package / Case : FTSMM-4 (M04)
Noise Figure : 0.45 dB
Power Dissipation : 125 mW


Parameters:

Technical/Catalog InformationNE3503M04-A
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 38V
Current Rating70mA
Package / CaseSC-70-4, SC-82AB, SOT-323-4, SOT-343
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE3503M04 A
NE3503M04A



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