Transistors RF GaAs L-S Band Lo No Amp
NE3510M04-A: Transistors RF GaAs L-S Band Lo No Amp
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Technology Type : | HEMT | Frequency : | 4 GHz | ||
Gain : | 16 dB | Noise Figure : | 0.45 dB | ||
Forward Transconductance gFS (Max / Min) : | 70 mS | Drain Source Voltage VDS : | 4 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 97 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 125 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | FTSMM-4 (M04) |
Technical/Catalog Information | NE3510M04-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 3V |
Current Rating | 30mA |
Package / Case | M04 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE3510M04 A NE3510M04A |