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NE3514S02-T1C-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET

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SeekIC No. : 00219193 Detail

NE3514S02-T1C-A: Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET

NE3514S02-T1C-A Data Sheet

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Part Number:
NE3514S02-T1C-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.61
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Technology Type : HEMT Frequency : 20 GHz
Gain : 10 dB Noise Figure : 0.75 dB
Forward Transconductance gFS (Max / Min) : 55 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 125 C Power Dissipation : 165 mW
Mounting Style : SMD/SMT Package / Case : S0-2    

Description

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : HEMT
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Gain : 10 dB
Frequency : 20 GHz
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Noise Figure : 0.75 dB
Package / Case : S0-2


Parameters:

Technical/Catalog InformationNE3514S02-T1C-A
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameS0-2
FET TypeHFET
Typical RF ApplicationDBS
Drain to Source Voltage (Vdss)4.0 V [Nom]
Voltage Gate to Source (Vgs)3.0 V [Max]
Continuous Drain Current (Id)70.00 mA [Nom]
Power Dissipation165.000 mW [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE3514S02 T1C A
NE3514S02T1CA



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