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Part Number: NE461M02
Description: The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications req...
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NE461M02
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DataSheet
General Description
NE461M02 General Description
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.
NE461M02 Maximum Ratings
| SYMBOLS | PARAMETERS | UNITS | RATINGS |
| VCBO | Collector to Base Voltage | V | 30 |
| VCEO | Collector to Emitter Voltage | V | 15 |
| VEBO | Emitter to Base Voltage | V | 3.0 |
| IC | Collector Current | mA | 250 |
| PT | Total Power Dissipation2 | W | 2.0 |
| TJ | Junction Temperature | 150 | |
| TSTG | Storage Temperature | -65 to +150 |
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic substrate (copper plating).
NE461M02 Features
• HIGH COLLECTOR CURRENT:
250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
• HIGH IP3:
37 dBm TYP at 1 GHz
250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
• HIGH IP3:
37 dBm TYP at 1 GHz
NE461M02
PDF/DataSheet Download
- Datasheet: NE461M02
- File Size: 47015 KB
- Manufacturer: NEC [NEC]
- Click here to Download
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