NE6500379A

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Continuous Drain Current : 4.5 A
Drain Source Voltage VDS : 15 V
Gain : 10 dB
Frequency : 1.9 GHz
Package / Case : 79A
Technology Type : MESFET
Gate-Source Breakdown Voltage : - 7 V
Power Dissipation : 21 W


Features:

• High Output Power : Po (1dB) = +35 dBm typ.
• High Linear Gain : 10 dB typ.
• High Power Added Efficiency: 50% typ. @V_DS = 6 V, I_Dset = 500 mA, f = 1.9 GHz


Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	VDS	15	V
Gate to Source Voltage	VGSO	7	V
Drain Current	ID	5.6	A
Gate Current	IG	50	mA
Total Power Dissipation	PT	21	W
Channel Temperature	Tch	150	°C
Storage Temperature	Tstg	65 to +150	V

Description

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. NE6500379A is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.