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NE6500379A-EVPW26

Transistors RF GaAs For NE6500379A 2.6G

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SeekIC No. : 00219254 Detail

NE6500379A-EVPW26: Transistors RF GaAs For NE6500379A 2.6G

NE6500379A-EVPW26 Data Sheet

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Part Number:
NE6500379A-EVPW26
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Technology Type : MESFET Frequency : 1.9 GHz
Gain : 10 dB Drain Source Voltage VDS : 15 V
Gate-Source Breakdown Voltage : - 7 V Continuous Drain Current : 4.5 A
Maximum Operating Temperature : + 150 C Power Dissipation : 21 W
Mounting Style : SMD/SMT Package / Case : 79A    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Continuous Drain Current : 4.5 A
Drain Source Voltage VDS : 15 V
Gain : 10 dB
Frequency : 1.9 GHz
Package / Case : 79A
Technology Type : MESFET
Gate-Source Breakdown Voltage : - 7 V
Power Dissipation : 21 W


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