NE650R479A

Features: • High Output Power : PO (1 dB) = +26 dBm typ.• High Linear Gain : 14 dB typ.• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V G...

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SeekIC No. : 004433440 Detail

NE650R479A: Features: • High Output Power : PO (1 dB) = +26 dBm typ.• High Linear Gain : 14 dB typ.• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHzSpecifications...

floor Price/Ceiling Price

Part Number:
NE650R479A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• High Output Power : PO (1 dB) = +26 dBm typ.
• High Linear Gain : 14 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz



Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7
V
Drain Current
ID
0.6
A
Gate Forward Current
IGF
12
mA
Gate Reverse Current
IGR
12
mA
Total Power Dissipation
PT
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
65 to +150
V



Description

The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. NE650R479A is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity of NE650R479A are assured by NEC's stringent quality and control procedures.




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