NE6510179A-A

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 10 dB
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Package / Case : 79A
Continuous Drain Current : 2.8 A
Power Dissipation : 15 W


Parameters:

Technical/Catalog Information	NE6510179A-A
Vendor	NEC Electronics
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	79A
FET Type	N-Channel HJ-FET
Typical RF Application	ISM
Typical RF Application	WLL
Typical RF Application	MMDS
Typical RF Application	PCS
Drain to Source Voltage (Vdss)	3.5 V [Nom]
Continuous Drain Current (Id)	1.20 A [Nom]
Power Dissipation	15.000 W [Max]
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NE6510179A A NE6510179AA