Transistors RF GaAs For NE6510179A-A Power at 2.6 GHz
NE6510179A-EVPW26: Transistors RF GaAs For NE6510179A-A Power at 2.6 GHz
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| Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
| Gain : | 10 dB | Drain Source Voltage VDS : | 8 V | ||
| Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 2.8 A | ||
| Maximum Operating Temperature : | + 150 C | Power Dissipation : | 15 W | ||
| Mounting Style : | SMD/SMT | Package / Case : | 79A |
| Technical/Catalog Information | NE6510179A-EVPW26 |
| Vendor | NEC |
| Category | RF and RFID |
| Type | Power GaAs FET |
| Contents | Fully Assembled Evaluation Board |
| For Use With/Related Products | NE6510179A@2.6GHz |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NE6510179A EVPW26 NE6510179AEVPW26 |