Transistors RF GaAs L&S Band GaAs HJFET
NE6510179A-T1-A: Transistors RF GaAs L&S Band GaAs HJFET
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Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
Gain : | 10 dB | Drain Source Voltage VDS : | 8 V | ||
Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 2.8 A | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 15 W | ||
Mounting Style : | SMD/SMT | Package / Case : | 79A |
Technical/Catalog Information | NE6510179A-T1-A |
Vendor | NEC Electronics |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | 79A |
FET Type | HFET |
Typical RF Application | ISM |
Typical RF Application | MMDS |
Typical RF Application | WLL |
Drain to Source Voltage (Vdss) | 8.0 V [Nom] |
Voltage Gate to Source (Vgs) | 4.0 V [Max] |
Continuous Drain Current (Id) | 2.80 A [Nom] |
Power Dissipation | 15.000 W [Max] |
Packaging | Tape & Reel, 7" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE6510179A T1 A NE6510179AT1A |