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NE651R479A-A

Transistors RF GaAs L&S Band GaAs HJFET

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SeekIC No. : 00219102 Detail

NE651R479A-A: Transistors RF GaAs L&S Band GaAs HJFET

NE651R479A-A Data Sheet

floor Price/Ceiling Price

US $ 4.27~5.57 / Piece | Get Latest Price
Part Number:
NE651R479A-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $5.57
  • $4.73
  • $4.5
  • $4.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Technology Type : HEMT Frequency : 1.9 GHz
Gain : 12 dB Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 125 C Power Dissipation : 2.5 W
Mounting Style : SMD/SMT Package / Case : 79A    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 1 A
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Power Dissipation : 2.5 W
Package / Case : 79A


Parameters:

Technical/Catalog InformationNE651R479A-A
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 3.5V
Current Rating700mA
Package / Case79A
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE651R479A A
NE651R479AA



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