Transistors RF GaAs For NE651R479A-A Power at 2.4 GHz
NE651R479A-EVPW24: Transistors RF GaAs For NE651R479A-A Power at 2.4 GHz
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| Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
| Gain : | 12 dB | Drain Source Voltage VDS : | 8 V | ||
| Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 1 A | ||
| Maximum Operating Temperature : | + 125 C | Power Dissipation : | 2.5 W | ||
| Mounting Style : | SMD/SMT | Package / Case : | 79A |
| Technical/Catalog Information | NE651R479A-EVPW24 |
| Vendor | NEC |
| Category | RF and RFID |
| Type | FET |
| Supplied Contents | Board |
| For Use With/Related Products | NE651R479A@2.4GHz |
| Frequency | 1.9GHz |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NE651R479A EVPW24 NE651R479AEVPW24 |