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NE651R479A

Transistors RF GaAs L&S Band GaAs HJFET

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SeekIC No. : 00219235 Detail

NE651R479A: Transistors RF GaAs L&S Band GaAs HJFET

NE651R479A Data Sheet

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Part Number:
NE651R479A
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Technology Type : HEMT Frequency : 1.9 GHz
Gain : 12 dB Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 125 C Power Dissipation : 2.5 W
Mounting Style : SMD/SMT Package / Case : 79A    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 1 A
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Power Dissipation : 2.5 W
Package / Case : 79A


Features:

• GaAs HJ-FET structure
• High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
                                     Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
                                     Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
• High linear gain :                   GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm
                                                  GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
                                                  GL = 12.0 dB TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
• High power added efficiency :        60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
                                                          60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
                                                          58 % TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
8
V
Gate to Source Voltage
VGSO
4
V
Drain Current
ID
1.0
A
Gate Forward Current
IGF
10
mA
Gate Reverse Current
IGR
10
mA
Total Power Dissipation
PT
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
65 to +150
V



Description

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. NE651R479A is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.

Reliability and performance uniformity of NE651R479A are assured by NEC's stringent quality and control procedures.




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