Transistors RF GaAs For NE651R479A-A Power at 2.6 GHz
NE651R479A-EVPW26: Transistors RF GaAs For NE651R479A-A Power at 2.6 GHz
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Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
Gain : | 12 dB | Drain Source Voltage VDS : | 8 V | ||
Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 1 A | ||
Maximum Operating Temperature : | + 125 C | Power Dissipation : | 2.5 W | ||
Mounting Style : | SMD/SMT | Package / Case : | 79A |