Transistors RF Bipolar Small Signal NPN High Frequency
NE662M04-A: Transistors RF Bipolar Small Signal NPN High Frequency
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DescriptionThe NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFIC...
| Configuration : | Single | Transistor Polarity : | NPN | ||
| Maximum Operating Frequency : | 25 GHz | Collector- Emitter Voltage VCEO Max : | 3.3 V | ||
| Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 0.035 A | ||
| Power Dissipation : | 0.115 W | Package / Case : | SOT-343 |
| Technical/Catalog Information | NE662M04-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 1.5dB @ 2GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| Gain | 20dB |
| Power - Max | 115mW |
| Compression Point (P1dB) | 11dBm |
| Package / Case | M04 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE662M04 A NE662M04A |