NE85619-T1 Selling Leads, Price trend, NE85619-T1 DataSheet download, circuit diagram from SeekIC.com

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NE85619-T1: TRANS NPN 1GHZ SMD

NE85619-T1 Data Sheet

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Part Number:: NE85619-T1
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/6

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Product Details

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Series:	-	Manufacturer:	CEL
Transistor Type:	NPN	Typical Resistor Ratio :	0.12
Voltage - Collector Emitter Breakdown (Max):	12V	Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 2.2dB @ 1GHz ~ 2GHz	Gain:	6.5dB ~ 12.5dB
Power - Max:	100mW	DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA	Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416	Supplier Device Package:	3-SuperMiniMold

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 12V
Manufacturer: CEL
Power - Max: 100mW
Package / Case: SC-75, SOT-416
Current - Collector (Ic) (Max): 100mA
Supplier Device Package: 3-SuperMiniMold
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain: 6.5dB ~ 12.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V

Parameters:

Technical/Catalog Information	NE85619-T1
Vendor	NEC (VA)
Category	Discrete Semiconductor Products
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	12.5dB ~ 6.5dB
Power - Max	100mW
Compression Point (P1dB)	-
Package / Case	Surface Mount
Packaging	Cut Tape (CT)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NE85619 T1 NE85619T1 NE85619CT ND NE85619CTND NE85619CT

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