NE85619-T1

TRANS NPN 1GHZ SMD

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SeekIC No. : 003435075 Detail

NE85619-T1: TRANS NPN 1GHZ SMD

floor Price/Ceiling Price

Part Number:
NE85619-T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Series: - Manufacturer: CEL
Transistor Type: NPN Typical Resistor Ratio : 0.12
Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz Gain: 6.5dB ~ 12.5dB
Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416 Supplier Device Package: 3-SuperMiniMold    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 12V
Manufacturer: CEL
Power - Max: 100mW
Package / Case: SC-75, SOT-416
Current - Collector (Ic) (Max): 100mA
Supplier Device Package: 3-SuperMiniMold
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain: 6.5dB ~ 12.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V


Parameters:

Technical/Catalog InformationNE85619-T1
VendorNEC (VA)
CategoryDiscrete Semiconductor Products
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain12.5dB ~ 6.5dB
Power - Max100mW
Compression Point (P1dB)-
Package / CaseSurface Mount
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE85619 T1
NE85619T1
NE85619CT ND
NE85619CTND
NE85619CT



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