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NE85639-A

Transistors RF Bipolar Small Signal NPN High Frequency

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SeekIC No. : 00218496 Detail

NE85639-A: Transistors RF Bipolar Small Signal NPN High Frequency

NE85639-A Data Sheet

floor Price/Ceiling Price

US $ .33~.62 / Piece | Get Latest Price
Part Number:
NE85639-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.62
  • $.49
  • $.41
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 12 V Emitter- Base Voltage VEBO : 3 V
Continuous Collector Current : 0.1 A Power Dissipation : 0.2 W
Package / Case : SOT-143    

Description

Maximum Operating Frequency :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Package / Case : SOT-143
Collector- Emitter Voltage VCEO Max : 12 V
Continuous Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 3 V
Power Dissipation : 0.2 W


Parameters:

Technical/Catalog InformationNE85639-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.1dB @ 1GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain13.5dB ~ 8.5dB
Power - Max200mW
Compression Point (P1dB)-
Package / CaseSOT-143-4, TO-253-4
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE85639 A
NE85639A



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