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NE856M02

Features: • HIGH COLLECTOR CURRENT: 100 mA MAX• NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)• HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz• HIGH IP3: 32 dBm TYP at 1 GHzSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collect...

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SeekIC No. : 004433491 Detail

NE856M02: Features: • HIGH COLLECTOR CURRENT: 100 mA MAX• NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)• HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz• HIGH IP3: 32 ...

NE856M02 Data Sheet

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Part Number:
NE856M02
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

• HIGH COLLECTOR CURRENT: 100 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz
• HIGH IP3: 32 dBm TYP at 1 GHz


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

20

VCBO
Collector to Base Voltage
V
12
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
100
PT
Total Power Dissipation2
mW
1.2
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic substrate (copper plating).


Description

The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. NE856M02 offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip.

The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.




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