Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain
NE856M03-A: Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain
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| Configuration : | Single | Transistor Polarity : | NPN | ||
| Maximum Operating Frequency : | 4 GHz | Collector- Emitter Voltage VCEO Max : | 12 V | ||
| Emitter- Base Voltage VEBO : | 3 V | Continuous Collector Current : | 0.1 A | ||
| Power Dissipation : | 0.125 W | Package / Case : | M03 |
| Technical/Catalog Information | NE856M03-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.5dB @ 1GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Gain | - |
| Power - Max | 125mW |
| Compression Point (P1dB) | - |
| Package / Case | 3-XSOF, MiniMold |
| Packaging | Bulk |
| Drawing Number | * |
| Mounting Type | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE856M03 A NE856M03A |