NES1823P-30

Features: • Push-pull type N-channel GaAs MES FET• High output power : 30 W TYP.• High linear gain : 13 dB TYP.• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Volt...

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SeekIC No. : 004433531 Detail

NES1823P-30: Features: • Push-pull type N-channel GaAs MES FET• High output power : 30 W TYP.• High linear gain : 13 dB TYP.• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = ...

floor Price/Ceiling Price

Part Number:
NES1823P-30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Push-pull type N-channel GaAs MES FET
• High output power : 30 W TYP.
• High linear gain : 13 dB TYP.
• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz



Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
-7
V
Gate to Drain Voltage
VGDO
-18
V
Drain Current
ID
27
A
Gate Current
IG
180
mA
Total Power Dissipation
PtotNote
90Note
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
-65 to +175
°C



Description

The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. NES1823P-30's primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The NES1823P-30 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC's NES1823P-30 stringent quality and control procedures.




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