Features: • Push-pull type N-channel GaAs MES FET• High output power : 30 W TYP.• High linear gain : 13 dB TYP.• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Volt...
NES1823P-30: Features: • Push-pull type N-channel GaAs MES FET• High output power : 30 W TYP.• High linear gain : 13 dB TYP.• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = ...
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Features: · High output power· High gain· High power added efficiency· Internally matched input· H...
Parameter |
Symbol |
Ratings |
Unit |
Drain to Source Voltage |
VDS |
15 |
V |
Gate to Source Voltage |
VGSO |
-7 |
V |
Gate to Drain Voltage |
VGDO |
-18 |
V |
Drain Current |
ID |
27 |
A |
Gate Current |
IG |
180 |
mA |
Total Power Dissipation |
PtotNote |
90Note |
W |
Channel Temperature |
Tch |
175 |
°C |
Storage Temperature |
Tstg |
-65 to +175 |
°C |
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. NES1823P-30's primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The NES1823P-30 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC's NES1823P-30 stringent quality and control procedures.