NSS60601MZ4T1G

Transistors Bipolar (BJT) NPN 60V/6A LOW VCE(SAT)

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NSS60601MZ4T1G: Transistors Bipolar (BJT) NPN 60V/6A LOW VCE(SAT)

floor Price/Ceiling Price

US $ .13~.35 / Piece | Get Latest Price
Part Number:
NSS60601MZ4T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.35
  • $.27
  • $.22
  • $.16
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 150 Configuration : Single Dual Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-223
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 60 V
DC Collector/Base Gain hfe Min : 150
Package / Case : SOT-223
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 6 A
Configuration : Single Dual Collector


Parameters:

Technical/Catalog InformationNSS60601MZ4T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)6A
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic100mV @ 200mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS60601MZ4T1G
NSS60601MZ4T1G
NSS60601MZ4T1GOSDKR ND
NSS60601MZ4T1GOSDKRND
NSS60601MZ4T1GOSDKR



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