NTB45N06

MOSFET 60V 45A N-Channel

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SeekIC No. : 00164592 Detail

NTB45N06: MOSFET 60V 45A N-Channel

floor Price/Ceiling Price

Part Number:
NTB45N06
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 26 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Resistance Drain-Source RDS (on) : 26 mOhms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 45 A


Features:

• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge



Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits



Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 Vdc
DraintoGate Voltage (RGS = 10 M) VDGR 60 Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp*10 s)
VGS
VGS
±20
±30
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp 10 ms)
ID
ID
IDM
45
30
150
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
PD 125
0.83
3.2
2.4
W
W/°C
W
W
Operating and Storage Temperature Range TJ, Tstg -55 to
+175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
EAS 240 mJ



Description

 NTB45N06 Designed for low voltage, high speed switching applications power supplies, converters and power motor controls and bridge circuits.




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