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NTB90N02T4G

MOSFET 28V 90A N-Channel

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SeekIC No. : 00160141 Detail

NTB90N02T4G: MOSFET 28V 90A N-Channel

NTB90N02T4G Data Sheet

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Part Number:
NTB90N02T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 5.8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 5.8 mOhms
Drain-Source Breakdown Voltage : 24 V


Parameters:

Technical/Catalog InformationNTB90N02T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs5.8 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds 2120pF @ 20V
Power - Max85W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs29nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB90N02T4G
NTB90N02T4G
NTB90N02T4GOSCT ND
NTB90N02T4GOSCTND
NTB90N02T4GOSCT



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