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NTD12N10T4G

MOSFET 100V 12A N-Channel

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SeekIC No. : 00161774 Detail

NTD12N10T4G: MOSFET 100V 12A N-Channel

NTD12N10T4G Data Sheet

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Part Number:
NTD12N10T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 165 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 165 mOhms


Parameters:

Technical/Catalog InformationNTD12N10T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs165 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max1.28W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD12N10T4G
NTD12N10T4G
NTD12N10T4GOSCT ND
NTD12N10T4GOSCTND
NTD12N10T4GOSCT



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