NTD6600N-1G

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Supplier Device Package: I-Pak
Manufacturer: ON Semiconductor
Power - Max: 1.28W
Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V


Parameters:

Technical/Catalog Information	NTD6600N-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	146 mOhm @ 6A, 5V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	1.28W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD6600N 1G NTD6600N1G