MOSFET N-CH 100V 12A IPAK
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| Series: | - | Manufacturer: | ON Semiconductor | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 100V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 12A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 146 mOhm @ 6A, 5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 2V @ 250µA | Gate Charge (Qg) @ Vgs: | 20nC @ 5V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 700pF @ 25V | ||
| Power - Max: | 1.28W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA | Supplier Device Package: | I-Pak |
| Technical/Catalog Information | NTD6600N-1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 146 mOhm @ 6A, 5V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 1.28W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | IPak, TO-251, DPak (3 straight short leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD6600N 1G NTD6600N1G |