NTGD4161PT1G

MOSFET PFET TSOP6 20V 2.3A 160mOhm

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NTGD4161PT1G: MOSFET PFET TSOP6 20V 2.3A 160mOhm

floor Price/Ceiling Price

US $ .23~.36 / Piece | Get Latest Price
Part Number:
NTGD4161PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.36
  • $.3
  • $.27
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 160 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 160 mOhms
Continuous Drain Current : 2.3 A
Package / Case : TSOP


Parameters:

Technical/Catalog InformationNTGD4161PT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs160 mOhm @ 2.1A, 10V
Input Capacitance (Ciss) @ Vds 281pF @ 15V
Power - Max600mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.1nC @ 10V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTGD4161PT1G
NTGD4161PT1G



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