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NTGS4111PT1

MOSFET -30V -4.7A P-Channel

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SeekIC No. : 00166136 Detail

NTGS4111PT1: MOSFET -30V -4.7A P-Channel

NTGS4111PT1 Data Sheet

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Part Number:
NTGS4111PT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.7 A
Resistance Drain-Source RDS (on) : 60 mOhms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 60 mOhms
Configuration : Single Quad Drain
Continuous Drain Current : 3.7 A
Package / Case : TSOP


Parameters:

Technical/Catalog InformationNTGS4111PT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs60 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 15V
Power - Max630mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTGS4111PT1
NTGS4111PT1



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