Position: Home  > All Categories> Integrated Circuits (ICs) > NTHD3100CT1G

NTHD3100CT1G

MOSFET 20V +3.9A/-4.4A Complementary

product image

NTHD3100CT1G Picture
See larger image
SeekIC No. : 00146125 Detail

NTHD3100CT1G: MOSFET 20V +3.9A/-4.4A Complementary

NTHD3100CT1G Data Sheet

floor Price/Ceiling Price

US $ .2~.4 / Piece | Get Latest Price
Part Number:
NTHD3100CT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.4
  • $.31
  • $.27
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V Continuous Drain Current : 2.9 A at N Channel, 3.2 A at P Channel
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : Chip FET
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V
Continuous Drain Current : 2.9 A at N Channel, 3.2 A at P Channel
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD3100CT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.9A, 3.2A
Rds On (Max) @ Id, Vgs80 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds 165pF @ 10V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.3nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD3100CT1G
NTHD3100CT1G
NTHD3100CT1GOSDKR ND
NTHD3100CT1GOSDKRND
NTHD3100CT1GOSDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Circuit Protection
A50QS75-4Y
F-17*77
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Prototyping Products
AVT4168
DE1
Cables, Wires
821-0814-a
415-0100-150
Filters
PICO2205A
PICO2204A
View more