NTHD3100CT1G, US $ .2-.4 , ON Semiconductor, NTHD3100CT1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146125 Detail

NTHD3100CT1G: MOSFET 20V +3.9A/-4.4A Complementary

NTHD3100CT1G Data Sheet

US $ .2~.4 / Piece | Get Latest Price

Part Number:: NTHD3100CT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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MOSFET -8V -4.6A P-Channel
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US $.23 - .36 / Piece

MOSFET -8V -4.6A P-Channel

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V, +/- 8 V	Continuous Drain Current :	2.9 A at N Channel, 3.2 A at P Channel
Resistance Drain-Source RDS (on) :	80 mOhms at 4.5 V	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	Chip FET	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : Chip FET
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V
Continuous Drain Current : 2.9 A at N Channel, 3.2 A at P Channel
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTHD3100CT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.9A, 3.2A
Rds On (Max) @ Id, Vgs	80 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds	165pF @ 10V
Power - Max	1.1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	2.3nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHD3100CT1G NTHD3100CT1G NTHD3100CT1GOSDKR ND NTHD3100CT1GOSDKRND NTHD3100CT1GOSDKR

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