NTHD4P02FT1G

MOSFET -20V -3A P-Channel w/3A Schottky

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SeekIC No. : 00148418 Detail

NTHD4P02FT1G: MOSFET -20V -3A P-Channel w/3A Schottky

floor Price/Ceiling Price

US $ .11~.29 / Piece | Get Latest Price
Part Number:
NTHD4P02FT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.29
  • $.2
  • $.16
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 155 mOhms at 4.5 V Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Dual Drain
Continuous Drain Current : 2.2 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 155 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD4P02FT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs155 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds 300pF @ 10V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD4P02FT1G
NTHD4P02FT1G
NTHD4P02FT1GOSTR ND
NTHD4P02FT1GOSTRND
NTHD4P02FT1GOSTR



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