Purchase NTHD5903T1, In-stock NTHD5903T1 From SeekIC.
MFG:ON D/C:06+
- Table of contents:
NTHD5903T1
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Suppliers
DataSheet
General Description
NTHD5903T1 Maximum Ratings
| Rating | Symbol | 5 secs | Steady State |
Unit |
| DrainSource Voltage | VDS | 20 | V | |
| GateSource Voltage | VGS | +12 | V | |
| Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C |
ID | ±2.9 ±2.1 |
±2.1 ±1.5 |
A |
| Pulsed Drain Current | IDM | ±10 | A | |
| Continuous Source Current (Diode Conduction) (Note 1) |
IS | 1.8 | 0.9 | A |
| Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C |
PD | 2.1 1.1 |
1.1 0.6 |
W |
| Operating Junction and Storage Temperature Range |
TJ, Tstg | 55 to +150 | °C | |
NTHD5903T1 Features
• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
NTHD5903T1 Typical Application
• Power Management in Portable and BatteryPowered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards
NTHD5903T1 Connection Diagram
NTHD5903T1
PDF/DataSheet Download
- Datasheet: NTHD5903T1
- File Size: 71435 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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- ETC [ETC]
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- ·NTH039C3
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