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NTMS4107N

Features: • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplication• Notebook Computer Vcore Applications• Network Applications• DC−DC ConvertersPinoutSpeci...

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SeekIC No. : 004436686 Detail

NTMS4107N: Features: • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplication• Noteb...

NTMS4107N Data Sheet

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Part Number:
NTMS4107N
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
• Optimized for Low Side Synchronous Applications
• High Speed Switching Capability


Application

• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Units
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current (Note 1)		 Steady
State		 TA = 25 °C ID 15 mA
TA = 70°C 11
tp10 s TA = 25 °C 18
Power Dissipation
(Note 1)		 Steady State TA = 25 °C Pd 1.67 W
tp10 s 2.5
Continuous Drain
Current (Note 2)		 Steady
State		 TA = 25 °C ID 11 A
TA = 70 °C 8.0
Power Dissipation
(Note 2)		 TA = 25 °C Pd 0.93 W
Pulsed Drain Current tp = 10 s IDM 56 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
150		 °C
Source Current (Body Diode) Ls 3.0 mA
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A,
L = 1 mH, RG = 25 )		 EAS 880 mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)		 TL 260 °C



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