NTMS4P01R2

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 3.4A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Manufacturer: ON Semiconductor
Power - Max: 790mW
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 1850pF @ 9.6V


Parameters:

Technical/Catalog Information	NTMS4P01R2
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	45 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1850pF @ 9.6V
Power - Max	790mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTMS4P01R2 NTMS4P01R2 NTMS4P01R2OS ND NTMS4P01R2OSND NTMS4P01R2OS