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NTMSD6N303R2G

MOSFET 30V 6A N-Channel

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SeekIC No. : 00161635 Detail

NTMSD6N303R2G: MOSFET 30V 6A N-Channel

NTMSD6N303R2G Data Sheet

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Part Number:
NTMSD6N303R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 32 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Package / Case : SOIC-8 Narrow
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 32 mOhms


Parameters:

Technical/Catalog InformationNTMSD6N303R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs32 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 950pF @ 24V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMSD6N303R2G
NTMSD6N303R2G
NTMSD6N303R2GOS ND
NTMSD6N303R2GOSND
NTMSD6N303R2GOS



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