NTMSD6N303R2G Selling Leads, Price trend , ON Semiconductor, NTMSD6N303R2G DataSheet download, circuit diagram from SeekIC.com

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NTMSD6N303R2G: MOSFET 30V 6A N-Channel

NTMSD6N303R2G Data Sheet

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Part Number:: NTMSD6N303R2G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/5

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6 A
Resistance Drain-Source RDS (on) :	32 mOhms	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Package / Case : SOIC-8 Narrow
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 32 mOhms

Parameters:

Technical/Catalog Information	NTMSD6N303R2G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	32 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	950pF @ 24V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTMSD6N303R2G NTMSD6N303R2G NTMSD6N303R2GOS ND NTMSD6N303R2GOSND NTMSD6N303R2GOS

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NTMSD6N303R2G

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