NZT605 Rev.C

      This device,the NPN Darlington Transistor sourced from process 06 is designed for applications extremely high gain at collector currents to 1.0A and high breakdown voltage.
      Here are some absolute maximum ratings about the NPN Darlington Transistor, which are limiting values above which the serviceability of any semiconductor device may be impaired. The collector-emitter voltage is 110V .The collector-base voltage is 140V . The emitter-base voltage is 10V . The collector current-continuous is 1.5A .The operating and storage junction temperature range is from -55 to +150.
      There are also some notes about it. These absolute maximum ratings are based on a maximum junction temperature of 150.And these are steady state limits. The factory should be consulted on application involving pulsed or low duty cycle operations.
      Here are two thermal characteristics about the NPN Darlington Transistor.The maximum value of total device dissipation is 1000mW.The maximum value of derate above 25 is 8.0mW/ .The maximum value of thermal resistance is 125/W.