NZT660

DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Package / Case : SOT-223
Maximum Operating Frequency : 75 MHz
Configuration : Single Dual Collector


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	60	V
VCBO	Collector-Base Voltage	80	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current - Continuous	3	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.


Parameters:

Technical/Catalog Information	NZT660
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	1.25V @ 100mA, 1A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NZT660 NZT660