PCF84C12AP

DescriptionThe PCF84C12AP is a kind of general purpose CMOS microcontroller with 1 kbyte of program memory.It includes 64 bytes of RAM and 13 I/O port lines. The instruction set is based on the MAB8048 and is a sub-set of that listed in the PCF84CxxxA family data sheet. It is available in DIP20 ...

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SeekIC No. : 004456429 Detail

PCF84C12AP: DescriptionThe PCF84C12AP is a kind of general purpose CMOS microcontroller with 1 kbyte of program memory.It includes 64 bytes of RAM and 13 I/O port lines. The instruction set is based on the MAB8...

floor Price/Ceiling Price

Part Number:
PCF84C12AP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Description

The PCF84C12AP is a kind of  general purpose CMOS microcontroller with 1 kbyte of program memory.It includes 64 bytes of RAM and 13 I/O port lines. The instruction set is based on the MAB8048 and is a sub-set of that listed in the "PCF84CxxxA family" data sheet. It is available in DIP20 package.

There are some features of PCF84C12AP as follows: (1)Manufactured in silicon gate CMOS process; (2)8-bit CPU, ROM, RAM, I/O in a 20-lead package; (3)1 kbyte ROM; (4)64 byte RAM; (5)Over 100 instructions (based on MAB8048) all of 1 or 2 cycles; (6)13 quasi-bidirectional I/O port lines; (7)8-bit programmable timer/event counter 1; (8)Two single-level vectored interrupts: external; 8-bit programmable timer/event counter 1; (9)Two test inputs, one of which also serves as the external interrupt input; (10)Stop and Idle modes; (11)Supply voltage: 2.5 to 5.5 V; (12)Clock frequency: 1 to 16 MHz; (13)Operating temperature: -40 to +85.

Then is about the limiting values of PCF84C12AP: (1)VDD, supply voltage: -0.5 to +7 V; (2)VI, all input voltages: -0.5 to VDD + 0.5 V; (3)II, DC input current: -10 to +10 mA; (4)IO, DC output current (except Port 1); output LOW: -10 to +10 mA; (5)Ptot, total power dissipation: 125 mW max; (6)PO, power dissipation per output: 30 mW max; (7)IDD, supply current: -50 to +50 mA; (8)ISS, ground supply current: -100 to +50 mA; (9)Tstg, storage temperature range: -55 to +150; (10)Tj, operating junction temperature: 90 max.




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